Introduction |
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1 | (6) |
Part I Semiconductor Physics |
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Chapter 1 Physics and Properties of Semiconductors—A Review |
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7 | (72) |
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7 | (1) |
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8 | (4) |
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1.3 Energy Bands and Energy Gap, |
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12 | (4) |
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1.4 Carrier Concentration at Thermal Equilibrium, |
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16 | (12) |
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1.5 Carrier-Transport Phenomena, |
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28 | (22) |
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1.6 Phonon, Optical, and Thermal Properties, |
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50 | (6) |
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1.7 Heterojunctions and Nanostructures, |
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56 | (6) |
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1.8 Basic Equations and Examples, |
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62 | (17) |
Part II Device Building Blocks |
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79 | (55) |
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79 | (1) |
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80 | (10) |
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2.3 Current-Voltage Characteristics, |
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90 | (12) |
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102 | (12) |
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2.5 Transient Behavior and Noise, |
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114 | (4) |
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118 | (6) |
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124 | (10) |
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Chapter 3 Metal-Semiconductor Contacts |
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134 | (63) |
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134 | (1) |
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3.2 Formation of Barrier, |
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135 | (18) |
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3.3 Current Transport Processes, |
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153 | (17) |
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3.4 Measurement of Barrier Height, |
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170 | (11) |
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181 | (6) |
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187 | (10) |
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Chapter 4 Metal-Insulator-Semiconductor Capacitors |
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197 | (46) |
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197 | (1) |
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198 | (15) |
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4.3 Silicon MOS Capacitor, |
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213 | (30) |
Part III Transistors |
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Chapter 5 Bipolar Transistors |
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243 | (50) |
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243 | (1) |
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5.2 Static Characteristics, |
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244 | (18) |
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5.3 Microwave Characteristics, |
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262 | (13) |
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5.4 Related Device Structures, |
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275 | (7) |
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5.5 Heterojunction Bipolar Transistor, |
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282 | (11) |
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293 | (81) |
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293 | (4) |
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6.2 Basic Device Characteristics, |
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297 | (23) |
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6.3 Nonuniform Doping and Buried-Channel Device, |
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320 | (8) |
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6.4 Device Scaling and Short-Channel Effects, |
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328 | (11) |
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339 | (8) |
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6.6 Circuit Applications, |
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347 | (3) |
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6.7 Nonvolatile Memory Devices, |
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350 | (10) |
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6.8 Single-Electron Transistor, |
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360 | (14) |
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Chapter 7 JFETs, MESFETs, and MODFETs |
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374 | (43) |
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374 | (1) |
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375 | (26) |
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401 | (16) |
Part IV Negative-Resistance and Power Devices |
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417 | (49) |
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417 | (1) |
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418 | (17) |
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8.3 Related Tunnel Devices, |
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435 | (19) |
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8.4 Resonant-Tunneling Diode, |
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454 | (12) |
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466 | (44) |
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466 | (1) |
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9.2 Static Characteristics, |
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467 | (7) |
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9.3 Dynamic Characteristics, |
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474 | (8) |
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9.4 Power and Efficiency, |
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482 | (7) |
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489 | (4) |
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9.6 Device Design and Performance, |
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493 | (4) |
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497 | (7) |
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504 | (6) |
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Chapter 10 Transferred-Electron and Real-Space-Transfer Devices |
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510 | (38) |
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510 | (1) |
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10.2 Transferred-Electron Device, |
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511 | (25) |
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10.3 Real-Space-Transfer Devices, |
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536 | (12) |
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Chapter 11 Thyristors and Power Devices |
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548 | (53) |
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548 | (1) |
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11.2 Thyristor Characteristics, |
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549 | (25) |
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11.3 Thyristor Variations, |
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574 | (8) |
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11.4 Other Power Devices, |
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582 | (19) |
Part V Photonic Devices and Sensors |
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Chapter 12 LEDs and Lasers |
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601 | (62) |
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601 | (2) |
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12.2 Radiative Transitions, |
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603 | (5) |
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12.3 Light-Emitting Diode (LED), |
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608 | (13) |
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621 | (9) |
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12.5 Laser Operating Characteristics, |
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630 | (21) |
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651 | (12) |
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Chapter 13 Photodetectors and Solar Cells |
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663 | (80) |
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663 | (4) |
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667 | (4) |
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671 | (12) |
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13.4 Avalanche Photodiode, |
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683 | (11) |
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694 | (3) |
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13.6 Charge-Coupled Device (CCD), |
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697 | (15) |
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13.7 Metal-Semiconductor-Metal Photodetector, |
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712 | (4) |
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13.8 Quantum-Well Infrared Photodetector, |
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716 | (3) |
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719 | (24) |
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743 | (30) |
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743 | (1) |
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744 | (6) |
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750 | (8) |
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758 | (7) |
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765 | (8) |
Appendixes |
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773 | (20) |
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775 | (10) |
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B. International System of Units, |
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785 | (1) |
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786 | (1) |
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787 | (1) |
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788 | (1) |
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F. Properties of Important Semiconductors, |
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789 | (1) |
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G. Properties of Si and GaAs, |
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790 | (1) |
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H. Properties of SiO2 and Si3N4, |
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791 | (2) |
Index |
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793 | |